PART |
Description |
Maker |
AS7C33512FT32_36A AS7C33512FT32_36A.V1.4 AS7C33512 |
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 10 ns, PQFP100 3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 7.5 ns, PQFP100 DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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IDT71T75602 IDT71T75802S100PFI8 IDT71T75802S100PF8 |
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM *NEW* 2.5V 512K X 36 ZBT Synchronous 2.5V I/O Pipeline SRAM 512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
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IDT
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IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100 256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
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Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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AS5SP512K18DQ AS5SP512K18DQ-30ET AS5SP512K18DQ-30I |
512K X 18 CACHE SRAM, 4 ns, PQFP100 Plastic Encapsulated Microcircuit 9Mb, 512K x 18, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
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MICROSS COMPONENTS Austin Semiconductor
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HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 SDRAM - 16Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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IDT70V7339S IDT70V7339S200BFI IDT70V7339S133DD IDT |
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V的为512k × 18 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接 HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 10 ns, PQFP144
|
Integrated Device Technology, Inc.
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GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
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GSI Technology
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GS88118AT-166I GS88118AT-225I GS88118AD-150I GS881 |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 7 ns, PQFP100 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 6 ns, PQFP100 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 256K X 32 CACHE SRAM, 7 ns, PBGA165
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GSI Technology, Inc.
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IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道,双循环取消选择静态RAM 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100 256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
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Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc
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M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1 |
1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM
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Elite Semiconductor Memory Technology Inc.
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HY57V643220DLT-55 HY57V643220DTP-45 HY57V643220DT- |
4Banks x 512K x 32bits Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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